STMicroelectronics STPSC2H12B-TR1 Rectifier Diodes
1200 V power Schottky silicon carbide diode
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STPSC2H12B-TR1
Base Model
Detailed Description
1200 V power Schottky silicon carbide diode
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Obsolete
Datasheet
STPSC2H12B-TR1 Datasheet
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Technical Specifications
STMicroelectronics STPSC2H12B-TR1 Rectifier Diodes technical specifications.
General
Series
ECOPACK®
RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Lifecycle Status
Obsolete
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
12 µA @ 1200 V
Capacitance Vr F
190pF @ 0V, 1MHz
Technology
SiC (Silicon Carbide) Schottky
Related Parts Comparison (STPSC2H12B-TR1 vs STPSC2H12B2Y-TR vs STPSC2H12D vs STPSC8H065BY-TR)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-220-2 | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
| Lifecycle Status | Obsolete | Active | Obsolete | Active |
| Capacitance Vr F | 190pF @ 0V, 1MHz | 190pF @ 0V, 1MHz | 190pF @ 0V, 1MHz | 414pF @ 0V, 1MHz |
| Current Average Rectified IO | 5A | 5A | 2A | 8A |
| Current Reverse Leakage Vr | 12 µA @ 1200 V | 12 µA @ 1200 V | 12 µA @ 1200 V | 80 µA @ 650 V |
| Operating Temperature Junction | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C |
| Speed | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage Dc Reverse Vr Max | 1200 V | 1200 V | 1200 V | 650 V |
| Reverse Recovery Time Trr | 0 ns | -- | 0 ns | 0 ns |
| Voltage Forward Vf Max If | 1.5 V @ 2 A | 1.5 V @ 2 A | 1.5 V @ 2 A | -- |
| Action |
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