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STMicroelectronics STPSC8H065BY-TR Rectifier Diodes

650V 8A SiC Rectifier Diode

10,000 ActiveSTMicroelectronicsSTPSC8H065TO-252-3, DPAK (2 Leads + Tab), SC-63$2.97
STPSC8H065BY-TR TO-252-3, DPAK (2 Leads + Tab), SC-63 package illustration

Same model may have multiple batches, images only for reference.

STPSC8H065BY-TR
Manufacturer
Part Number (MPN)
STPSC8H065BY-TR
Base Model
Detailed Description
650V 8A SiC Rectifier Diode
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
PDF STPSC8H065BY-TR Datasheet
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Ordering Code Family

STPSC8H065 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

6 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STPSC8H065BY-TR Rectifier Diodes technical specifications.

General

Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Lifecycle Status
Active
Current Reverse Leakage Vr
80 µA @ 650 V
Capacitance Vr F
414pF @ 0V, 1MHz
Grade
Automotive
Qualification
AEC-Q101
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
650 V
Current Average Rectified IO
8A

Related Parts Comparison (STPSC8H065BY-TR vs STPSC8H065DI vs STPSC8H065DLF vs STPSC8H065B-TR)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-252-3, DPAKTO-220-2 Insulated, TO-220AC4-PowerVDFNTO-252-3, DPAK
Mounting TypeSurface MountThrough HoleSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Current Average Rectified IO8A8A8A8A
Current Reverse Leakage Vr80 µA @ 650 V80 µA @ 650 V80 µA @ 650 V80 µA @ 650 V
Operating Temperature Junction-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C
SpeedZero Recovery Time > 500mA (Io)Fast Recovery =< 500ns, > 200mA (Io)Zero Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)
TechnologySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max650 V650 V650 V650 V
Capacitance Vr F414pF @ 0V, 1MHz--460pF @ 0V, 1MHz414pF @ 0V, 1MHz
GradeAutomotive--IndustrialIndustrial
Reverse Recovery Time Trr0 ns--0 ns0 ns
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