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STMicroelectronics STPSC6H065DI Rectifier Diodes

650 V, 6 A High Surge Silicon Carbide Power Schottky Diode

3 ActiveSTMicroelectronicsSTPSC6H065TO-220-2 Insulated, TO-220AC$8.09
STPSC6H065DI - No Image Available

Same model may have multiple batches, images only for reference.

STPSC6H065DI
Manufacturer
Part Number (MPN)
STPSC6H065DI
Base Model
Detailed Description
650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
Package
TO-220-2 Insulated, TO-220AC
Lifecycle Status
Active
Datasheet
PDF STPSC6H065DI Datasheet
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Ordering Code Family

STPSC6H065 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

4 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STPSC6H065DI Rectifier Diodes technical specifications.

General

Package / Case
TO-220-2 Insulated, TO-220AC
Mounting Type
Through Hole
Lifecycle Status
Active
Description
DIODE SIC 650V 6A TO220AC INS
Detailed Description
Diode 650 V 6A Through Hole TO-220AC ins
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current Reverse Leakage Vr
60 µA @ 650 V
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
650 V
Operating Temperature Junction
-40°C ~ 175°C

Alternate Parts Comparison (STPSC6H065DI vs STPSC6H065BY-TR vs STPSC6H065G-TR vs STPSC6H065D)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-2 Insulated, TO-220ACTO-252-3, DPAKTO-263-3, D2PAKTO-220-2
Mounting TypeThrough HoleSurface MountSurface MountThrough Hole
Lifecycle StatusActiveActiveActiveActive
Current Average Rectified IO6A6A6A6A
Current Reverse Leakage Vr60 µA @ 650 V60 µA @ 650 V60 µA @ 650 V60 µA @ 650 V
DescriptionDIODE SIC 650V 6A TO220AC INSDIODE SIL CARBIDE 650V 6A DPAKDIODE SIL CARBIDE 650V 6A D2PAKDIODE SIL CARB 650V 6A TO220AC
Detailed DescriptionDiode 650 V 6A Through Hole TO-220AC insDiode 650 V 6A Surface Mount DPAKDiode 650 V 6A Surface Mount D2PAKDiode 650 V 6A Through Hole TO-220AC
Operating Temperature Junction-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)Zero Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)
TechnologySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max650 V650 V650 V650 V
Voltage Forward Vf Max If1.75 V @ 6 A--1.75 V @ 6 A1.75 V @ 6 A
Action

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