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STMicroelectronics STPSC6H065DI Rectifier Diodes

650 V, 6 A High Surge Silicon Carbide Power Schottky Diode

3 ActiveSTMicroelectronicsSTPSC6H065TO-220-2 Insulated, TO-220AC$8.09
STPSC6H065DI TO-220-2 Insulated, TO-220AC package illustration

Same model may have multiple batches, images only for reference.

STPSC6H065DI
Manufacturer
Part Number (MPN)
STPSC6H065DI
Base Model
Detailed Description
650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
Package
TO-220-2 Insulated, TO-220AC
Lifecycle Status
Active
Datasheet
PDF STPSC6H065DI Datasheet
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Ordering Code Family

STPSC6H065 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

4 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STPSC6H065DI Rectifier Diodes technical specifications.

General

RoHS
Yes
Package / Case
TO-220-2 Insulated, TO-220AC
Mounting Type
Through Hole
Lifecycle Status
Active
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current Reverse Leakage Vr
60 µA @ 650 V
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
650 V
Operating Temperature Junction
-40°C ~ 175°C
Current Average Rectified IO
6A

Related Parts Comparison (STPSC6H065DI vs STPSC6H065BY-TR vs STPSC6H065G-TR vs STPSC6H065D)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-220-2 Insulated, TO-220ACTO-252-3, DPAKTO-263-3, D2PAKTO-220-2
Mounting TypeThrough HoleSurface MountSurface MountThrough Hole
Lifecycle StatusActiveActiveActiveActive
Current Average Rectified IO6A6A6A6A
Current Reverse Leakage Vr60 µA @ 650 V60 µA @ 650 V60 µA @ 650 V60 µA @ 650 V
Operating Temperature Junction-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)Zero Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)
TechnologySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max650 V650 V650 V650 V
GradeIndustrialAutomotive--Industrial
Voltage Forward Vf Max If1.75 V @ 6 A--1.75 V @ 6 A1.75 V @ 6 A
Capacitance Vr F--300pF @ 0V, 1MHz300pF @ 0V, 1MHz300pF @ 0V, 1MHz
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