STMicroelectronics STPSC6H065D Rectifier Diodes
650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STPSC6H065D
Base Model
Detailed Description
650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
Package
TO-220-2
Lifecycle Status
Active
Datasheet
STPSC6H065D Datasheet
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Technical Specifications
STMicroelectronics STPSC6H065D Rectifier Diodes technical specifications.
General
Package / Case
TO-220-2
Mounting Type
Through Hole
Lifecycle Status
Active
Description
DIODE SIL CARB 650V 6A TO220AC
Detailed Description
Diode 650 V 6A Through Hole TO-220AC
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
60 µA @ 650 V
Capacitance Vr F
300pF @ 0V, 1MHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
650 V
Alternate Parts Comparison (STPSC6H065D vs STPSC6H065DI vs STPSC6H065BY-TR vs STPSC6H065G-TR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-2 | TO-220-2 Insulated, TO-220AC | TO-252-3, DPAK | TO-263-3, D2PAK |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Average Rectified IO | 6A | 6A | 6A | 6A |
| Current Reverse Leakage Vr | 60 µA @ 650 V | 60 µA @ 650 V | 60 µA @ 650 V | 60 µA @ 650 V |
| Description | DIODE SIL CARB 650V 6A TO220AC | DIODE SIC 650V 6A TO220AC INS | DIODE SIL CARBIDE 650V 6A DPAK | DIODE SIL CARBIDE 650V 6A D2PAK |
| Detailed Description | Diode 650 V 6A Through Hole TO-220AC | Diode 650 V 6A Through Hole TO-220AC ins | Diode 650 V 6A Surface Mount DPAK | Diode 650 V 6A Surface Mount D2PAK |
| Operating Temperature Junction | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C |
| Speed | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage Dc Reverse Vr Max | 650 V | 650 V | 650 V | 650 V |
| Capacitance Vr F | 300pF @ 0V, 1MHz | -- | 300pF @ 0V, 1MHz | 300pF @ 0V, 1MHz |
| Action |
More Parts in Rectifier Diodes
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
STPSC6H065BY-TRSTMicroelectronicsAutomotive 650 V, 6 A High Surge Silicon Carbide Power Schottky Diode