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STMicroelectronics STB30N80K5 MOSFETs

N-channel 800 V, 0.15 Ohm typ., 24 A MDmesh K5 Power MOSFET in a D2PAK package

2,051 ActiveSTMicroelectronicsSTB30NTO-263 (D2PAK)$24.19
STB30N80K5 - No Image Available

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STB30N80K5
Manufacturer
Part Number (MPN)
STB30N80K5
Base Model
Detailed Description
N-channel 800 V, 0.15 Ohm typ., 24 A MDmesh K5 Power MOSFET in a D2PAK package
Package
TO-263 (D2PAK)
Lifecycle Status
Active
Datasheet
PDF STB30N80K5 Datasheet
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Ordering Code Family

STB30N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

4 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STB30N80K5 MOSFETs technical specifications.

General

Series
MDmesh™ K5
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
5V @ 100µA
Gate Charge Qg Max Vgs
43 nC @ 10 V
Vgs Max
±30V
Input Capacitance Ciss Max Vds
1530 pF @ 100 V
Power Dissipation Max
250W (Tc)

Alternate Parts Comparison (STB30N80K5 vs STB30N65M2AG vs STB30N65DM6AG vs STB30N65M5)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Lifecycle StatusActiveObsoleteActiveActive
Current Continuous Drain ID 25 C24A (Tc)20A (Tc)28A (Tc)22A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss800 V650 V650 V650 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs43 nC @ 10 V30.8 nC @ 10 V46 nC @ 10 V64 nC @ 10 V
Input Capacitance Ciss Max Vds1530 pF @ 100 V1440 pF @ 100 V2000 pF @ 100 V2880 pF @ 100 V
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