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STMicroelectronics STB30N65M5 MOSFETs

650V 22A N-CH MOSFET D2PAK

762 ActiveSTMicroelectronicsSTB30ND2PAK$15.92
STB30N65M5 - No Image Available

Same model may have multiple batches, images only for reference.

STB30N65M5
Manufacturer
Part Number (MPN)
STB30N65M5
Base Model
Detailed Description
650V 22A N-CH MOSFET D2PAK
Package
D2PAK
Lifecycle Status
Active
Datasheet
PDF STB30N65M5 Datasheet
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Ordering Code Family

STB30N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

4 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STB30N65M5 MOSFETs technical specifications.

General

Series
MDmesh™ V
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
5V @ 250µA
Gate Charge Qg Max Vgs
64 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
2880 pF @ 100 V
Power Dissipation Max
140W (Tc)

Alternate Parts Comparison (STB30N65M5 vs STB30N65M2AG vs STB30N65DM6AG vs STB30N80K5)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveObsoleteActiveActive
Current Continuous Drain ID 25 C22A (Tc)20A (Tc)28A (Tc)24A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss650 V650 V650 V800 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs64 nC @ 10 V30.8 nC @ 10 V46 nC @ 10 V43 nC @ 10 V
Input Capacitance Ciss Max Vds2880 pF @ 100 V1440 pF @ 100 V2000 pF @ 100 V1530 pF @ 100 V
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