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STMicroelectronics STB30N65M2AG MOSFETs

Automotive-grade N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in a D2PAK package

5STMicroelectronicsSTB30NTO-263 (D2PAK)$5.61
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STB30N65M2AG
Manufacturer
Part Number (MPN)
STB30N65M2AG
Base Model
Detailed Description
Automotive-grade N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in a D2PAK package
Package
TO-263 (D2PAK)
Lifecycle Status
Obsolete
Datasheet
PDF STB30N65M2AG Datasheet
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Ordering Code Family

STB30N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

4 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STB30N65M2AG MOSFETs technical specifications.

General

Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Gate Charge Qg Max Vgs
30.8 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
1440 pF @ 100 V
Power Dissipation Max
190W (Tc)
Fet Type
N-Channel
Technology
MOSFET (Metal Oxide)

Alternate Parts Comparison (STB30N65M2AG vs STB30N80K5 vs STB30N65M5 vs STB30N65DM6AG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Continuous Drain ID 25 C20A (Tc)24A (Tc)22A (Tc)28A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss650 V800 V650 V650 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs30.8 nC @ 10 V43 nC @ 10 V64 nC @ 10 V46 nC @ 10 V
Input Capacitance Ciss Max Vds1440 pF @ 100 V1530 pF @ 100 V2880 pF @ 100 V2000 pF @ 100 V
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