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STMicroelectronics STB120N4LF6 MOSFETs

N-Ch 40V 80A 4mR D2PAK Power MOSFET

5,700STMicroelectronicsSTB120NTO-263 (D2PAK)$6.74
STB120N4LF6 TO-263 (D2PAK) package illustration

Same model may have multiple batches, images only for reference.

STB120N4LF6
Manufacturer
Part Number (MPN)
STB120N4LF6
Base Model
Detailed Description
N-Ch 40V 80A 4mR D2PAK Power MOSFET
Package
TO-263 (D2PAK)
Lifecycle Status
Last Time Buy
Datasheet
PDF STB120N4LF6 Datasheet
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Ordering Code Family

STB120N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STB120N4LF6 MOSFETs technical specifications.

General

Series
DeepGATE™, STripFET™ VI
RoHS
Yes
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Last Time Buy
Gate Charge Qg Max Vgs
80 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
4300 pF @ 25 V
Power Dissipation Max
110W (Tc)

Alternate Parts Comparison (STB120N4LF6 vs STB120N4F6 vs STBB1-APUR vs STBB3JR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-3, D2PAKTO-263-3, D2PAK10-VFDFN Exposed Pad20-UFBGA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 85°C (TJ)-40°C ~ 85°C (TA)
Lifecycle StatusLast Time BuyActiveActiveActive
SeriesDeepGATE™, STripFET™ VIDeepGATE™, STripFET™ VI----
Current Continuous Drain ID 25 C80A (Tc)80A (Tc)----
Drain to Source Voltage Vdss40 V40 V----
Drive Voltage Max Rds on Min Rds on5V, 10V10V----
Fet TypeN-ChannelN-Channel----
Gate Charge Qg Max Vgs80 nC @ 10 V65 nC @ 10 V----
GradeAutomotiveAutomotive----
Input Capacitance Ciss Max Vds4300 pF @ 25 V3850 pF @ 25 V----
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