STMicroelectronics SCTWA90N65G2V-4 MOSFETs
TRANS SJT N-CH 650V 119A HIP247
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCTWA90N65G2V-4
Base Model
Detailed Description
TRANS SJT N-CH 650V 119A HIP247
Package
HiP247™ Long Leads
Lifecycle Status
Active
Datasheet
SCTWA90N65G2V-4 Datasheet
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Technical Specifications
STMicroelectronics SCTWA90N65G2V-4 MOSFETs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Active
Description
TRANS SJT N-CH 650V 119A HIP247
Detailed Description
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads
Gate Charge Qg Max Vgs
157 nC @ 18 V
Vgs Max
+22V, -10V
Input Capacitance Ciss Max Vds
3380 pF @ 400 V
Power Dissipation Max
565W (Tc)
Alternate Parts Comparison (SCTWA90N65G2V-4 vs SCTWA90N65G2V vs SCTWA30N120 vs SCTWA60N120G2-4)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-4 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) |
| Lifecycle Status | Active | Active | Obsolete | Obsolete |
| Current Continuous Drain ID 25 C | 119A (Tc) | 119A (Tc) | 45A (Tc) | 60A (Tc) |
| Description | TRANS SJT N-CH 650V 119A HIP247 | SILICON CARBIDE POWER MOSFET 650 | IC POWER MOSFET 1200V HIP247 | SILICON CARBIDE POWER MOSFET 120 |
| Detailed Description | N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads | N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads | N-Channel 1200 V 45A (Tc) 270W (Tc) Through Hole HiP247™ Long Leads | N-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4 |
| Drain to Source Voltage Vdss | 650 V | 650 V | 1200 V | 1200 V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 157 nC @ 18 V | 157 nC @ 18 V | 105 nC @ 20 V | 94 nC @ 18 V |
| Input Capacitance Ciss Max Vds | 3380 pF @ 400 V | 3380 pF @ 400 V | 1700 pF @ 400 V | 1969 pF @ 800 V |
| Power Dissipation Max | 565W (Tc) | 565W (Tc) | 270W (Tc) | 388W (Tc) |
| Action |
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