STMicroelectronics SCTWA90N65G2V MOSFETs
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCTWA90N65G2V
Base Model
Detailed Description
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
Package
TO-247 Long Leads
Lifecycle Status
Active
Datasheet
SCTWA90N65G2V Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics SCTWA90N65G2V MOSFETs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Active
Description
SILICON CARBIDE POWER MOSFET 650
Detailed Description
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads
Vgs Th Max ID
5V @ 1mA
Gate Charge Qg Max Vgs
157 nC @ 18 V
Vgs Max
+22V, -10V
Input Capacitance Ciss Max Vds
3380 pF @ 400 V
Alternate Parts Comparison (SCTWA90N65G2V vs SCTWA90N65G2V-4 vs SCTWA35N65G2V vs STWA65N60DM6)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Active | Active | Obsolete | Active |
| Current Continuous Drain ID 25 C | 119A (Tc) | 119A (Tc) | 45A (Tc) | 38A (Tc) |
| Description | SILICON CARBIDE POWER MOSFET 650 | TRANS SJT N-CH 650V 119A HIP247 | TRANS SJT N-CH 650V 45A TO247 | MOSFET N-CH 600V 38A TO247 |
| Detailed Description | N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads | N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads | N-Channel 650 V 45A (Tc) 208W (Tc) Through Hole TO-247 Long Leads | N-Channel 600 V 38A (Tc) Through Hole TO-247 Long Leads |
| Drain to Source Voltage Vdss | 650 V | 650 V | 650 V | 600 V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | MOSFET (Metal Oxide) |
| Vgs Max | +22V, -10V | +22V, -10V | +20V, -5V | ±25V |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 175°C (TJ) | -- |
| Gate Charge Qg Max Vgs | 157 nC @ 18 V | 157 nC @ 18 V | 73 nC @ 20 V | -- |
| Action |
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Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
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