STMicroelectronics SCTWA30N120 MOSFETs

Name: SCTWA30N120
Brand: STMicroelectronics
SKU: SCTWA30N120
Price: 65.9794 USD
Availability: InStock

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ.

3STMicroelectronicsHiP247™ Long Leads$65.98

Same model may have multiple batches, images only for reference.

SCTWA30N120

Manufacturer

STMicroelectronics

Part Number (MPN)

SCTWA30N120

Technical Specifications

STMicroelectronics SCTWA30N120 MOSFETs technical specifications.

General

Package / Case

TO-247-3

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 200°C (TJ)

Lifecycle Status

Obsolete

Vgs Th Max ID

3.5V @ 1mA (Typ)

Gate Charge Qg Max Vgs

105 nC @ 20 V

Vgs Max

+25V, -10V

Input Capacitance Ciss Max Vds

1700 pF @ 400 V

Fet Type

N-Channel

Power Dissipation Max

270W (Tc)

Alternate Parts Comparison (SCTWA30N120 vs SCTWA90N65G2V-4 vs SCTWA60N120G2-4 vs SCTWA70N120G2V-4)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	STMicroelectronicsSCTWA30N120	STMicroelectronicsSCTWA90N65G2V-4	STMicroelectronicsSCTWA60N120G2-4	STMicroelectronicsSCTWA70N120G2V-4
Package / Case	TO-247-3	TO-247-3	TO-247-4	TO-247-4
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Operating Temperature	-55°C ~ 200°C (TJ)	-55°C ~ 200°C (TJ)	-55°C ~ 200°C (TJ)	-55°C ~ 200°C (TJ)
Lifecycle Status	Obsolete	Active	Obsolete	Active
Current Continuous Drain ID 25 C	45A (Tc)	119A (Tc)	60A (Tc)	91A (Tc)
Description	--	--	--	--
Detailed Description	--	--	--	--
Drain to Source Voltage Vdss	1200 V	650 V	1200 V	1200 V
Fet Type	N-Channel	N-Channel	N-Channel	N-Channel
Gate Charge Qg Max Vgs	105 nC @ 20 V	157 nC @ 18 V	94 nC @ 18 V	150 nC @ 18 V
Input Capacitance Ciss Max Vds	1700 pF @ 400 V	3380 pF @ 400 V	1969 pF @ 800 V	3540 pF @ 800 V
Power Dissipation Max	270W (Tc)	565W (Tc)	388W (Tc)	547W
Action	RFQ	RFQ	RFQ	RFQ

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