STMicroelectronics SCTWA30N120 MOSFETs

Name: SCTWA30N120
Brand: STMicroelectronics
SKU: SCTWA30N120
Price: 65.9794 USD
Availability: InStock

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ.

3STMicroelectronicsHiP247™ Long Leads$65.98

Same model may have multiple batches, images only for reference.

SCTWA30N120

Manufacturer

STMicroelectronics

Part Number (MPN)

SCTWA30N120

Technical Specifications

STMicroelectronics SCTWA30N120 MOSFETs technical specifications.

General

Package / Case

TO-247-3

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 200°C (TJ)

Lifecycle Status

Obsolete

Description

IC POWER MOSFET 1200V HIP247

Detailed Description

N-Channel 1200 V 45A (Tc) 270W (Tc) Through Hole HiP247™ Long Leads

Vgs Th Max ID

3.5V @ 1mA (Typ)

Gate Charge Qg Max Vgs

105 nC @ 20 V

Vgs Max

+25V, -10V

Input Capacitance Ciss Max Vds

1700 pF @ 400 V

Alternate Parts Comparison (SCTWA30N120 vs SCTWA90N65G2V-4 vs SCTWA60N120G2-4 vs SCTWA70N120G2V-4)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	STMicroelectronicsSCTWA30N120	STMicroelectronicsSCTWA90N65G2V-4	STMicroelectronicsSCTWA60N120G2-4	STMicroelectronicsSCTWA70N120G2V-4
Package / Case	TO-247-3	TO-247-3	TO-247-4	TO-247-4
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Operating Temperature	-55°C ~ 200°C (TJ)	-55°C ~ 200°C (TJ)	-55°C ~ 200°C (TJ)	-55°C ~ 200°C (TJ)
Lifecycle Status	Obsolete	Active	Obsolete	Active
Current Continuous Drain ID 25 C	45A (Tc)	119A (Tc)	60A (Tc)	91A (Tc)
Description	IC POWER MOSFET 1200V HIP247	TRANS SJT N-CH 650V 119A HIP247	SILICON CARBIDE POWER MOSFET 120	DISCRETE
Detailed Description	N-Channel 1200 V 45A (Tc) 270W (Tc) Through Hole HiP247™ Long Leads	N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads	N-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4	N-Channel 1200 V 91A (Tc) 547W Through Hole TO-247-4
Drain to Source Voltage Vdss	1200 V	650 V	1200 V	1200 V
Fet Type	N-Channel	N-Channel	N-Channel	N-Channel
Gate Charge Qg Max Vgs	105 nC @ 20 V	157 nC @ 18 V	94 nC @ 18 V	150 nC @ 18 V
Input Capacitance Ciss Max Vds	1700 pF @ 400 V	3380 pF @ 400 V	1969 pF @ 800 V	3540 pF @ 800 V
Power Dissipation Max	270W (Tc)	565W (Tc)	388W (Tc)	547W
Action	RFQ	RFQ	RFQ	RFQ

More Parts in MOSFETs

Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.

SCTWA90N65G2V-4 STMicroelectronics

TRANS SJT N-CH 650V 119A HIP247

STD80N6F7 STMicroelectronics

N-channel 60 V, 6.8 mOhm typ., 40 A STripFET F7 Power MOSFET in a DPAK package

STD9N80K5 STMicroelectronics

N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSFET in a DPAK package

STF23N80K5 STMicroelectronics

N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in TO-220FP package

IRF640NPBF STMicroelectronics

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

STF24N60M6 STMicroelectronics

N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-220FP package

STP105N3LL STMicroelectronics

N-channel 30 V, 2.7 mOhm typ., 150 A STripFET H6 Power MOSFET in a TO-220 package

STL90N10F7 STMicroelectronics

N-Ch 100V 70A Power MOSFET, 8mR Rds(on), Surface Mount

STW62N65M5 STMicroelectronics

650V 46A N-CH MOSFET TO-247 41mR Rds(on)

STH270N4F3-6 STMicroelectronics

N-CH MOSFET 40V 180A H2PAK SMT Power Transistor

STU5N95K3 STMicroelectronics

N-Ch MOSFET 950V 4A 3R IPAK Through Hole

STH13N120K5-2AG STMicroelectronics

Automotive-grade N-channel 1200 V, 0,62 Ohm typ., 12 A MDmesh K5 Power MOSFET in an H2PAK-2 package