STMicroelectronics SCTWA60N120G2-4 MOSFETs
SILICON CARBIDE POWER MOSFET 120
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCTWA60N120G2-4
Detailed Description
SILICON CARBIDE POWER MOSFET 120
Package
TO-247-4
Lifecycle Status
Obsolete
Datasheet
SCTWA60N120G2-4 Datasheet
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Technical Specifications
STMicroelectronics SCTWA60N120G2-4 MOSFETs technical specifications.
General
Package / Case
TO-247-4
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
5V @ 1mA
Gate Charge Qg Max Vgs
94 nC @ 18 V
Vgs Max
+22V, -10V
Input Capacitance Ciss Max Vds
1969 pF @ 800 V
Fet Type
N-Channel
Power Dissipation Max
388W (Tc)
Alternate Parts Comparison (SCTWA60N120G2-4 vs SCTWA70N120G2V-4 vs SCTWA35N65G2V vs SCTWA30N120)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-4 | TO-247-4 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 200°C (TJ) |
| Lifecycle Status | Obsolete | Active | Obsolete | Obsolete |
| Current Continuous Drain ID 25 C | 60A (Tc) | 91A (Tc) | 45A (Tc) | 45A (Tc) |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Drain to Source Voltage Vdss | 1200 V | 1200 V | 650 V | 1200 V |
| Drive Voltage Max Rds on Min Rds on | 18V | 18V | 18V, 20V | 20V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 94 nC @ 18 V | 150 nC @ 18 V | 73 nC @ 20 V | 105 nC @ 20 V |
| Input Capacitance Ciss Max Vds | 1969 pF @ 800 V | 3540 pF @ 800 V | 73000 pF @ 400 V | 1700 pF @ 400 V |
| Action |
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