STMicroelectronics SCTWA35N65G2V MOSFETs

Name: SCTWA35N65G2V
Brand: STMicroelectronics
SKU: SCTWA35N65G2V
Price: 28.5441 USD
Availability: InStock

Silicon carbide Power MOSFET 650 V, 45 A, 75 mOhm (typ.

6STMicroelectronicsTO-247 Long Leads$28.54

Same model may have multiple batches, images only for reference.

SCTWA35N65G2V

Manufacturer

STMicroelectronics

Part Number (MPN)

SCTWA35N65G2V

Technical Specifications

STMicroelectronics SCTWA35N65G2V MOSFETs technical specifications.

General

Package / Case

TO-247-3

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 175°C (TJ)

Lifecycle Status

Obsolete

Description

TRANS SJT N-CH 650V 45A TO247

Detailed Description

N-Channel 650 V 45A (Tc) 208W (Tc) Through Hole TO-247 Long Leads

Vgs Th Max ID

3.2V @ 1mA

Gate Charge Qg Max Vgs

73 nC @ 20 V

Vgs Max

+20V, -5V

Input Capacitance Ciss Max Vds

73000 pF @ 400 V

Alternate Parts Comparison (SCTWA35N65G2V vs SCTWA90N65G2V vs STWA65N60DM6 vs STWA65N65DM2AG)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	STMicroelectronicsSCTWA35N65G2V	STMicroelectronicsSCTWA90N65G2V	STMicroelectronicsSTWA65N60DM6	STMicroelectronicsSTWA65N65DM2AG
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Lifecycle Status	Obsolete	Active	Active	Active
Current Continuous Drain ID 25 C	45A (Tc)	119A (Tc)	38A (Tc)	60A (Tc)
Description	TRANS SJT N-CH 650V 45A TO247	SILICON CARBIDE POWER MOSFET 650	MOSFET N-CH 600V 38A TO247	MOSFET N-CH 650V 60A TO247
Detailed Description	N-Channel 650 V 45A (Tc) 208W (Tc) Through Hole TO-247 Long Leads	N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads	N-Channel 600 V 38A (Tc) Through Hole TO-247 Long Leads	N-Channel 650 V 60A (Tc) 446W (Tc) Through Hole TO-247 Long Leads
Drain to Source Voltage Vdss	650 V	650 V	600 V	650 V
Fet Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	SiCFET (Silicon Carbide)	SiCFET (Silicon Carbide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs Max	+20V, -5V	+22V, -10V	±25V	±25V
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 200°C (TJ)	--	-55°C ~ 150°C (TJ)
Drive Voltage Max Rds on Min Rds on	18V, 20V	18V	--	10V
Action	RFQ	RFQ	RFQ	RFQ

More Parts in MOSFETs

Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.

STWA72N60DM2AG STMicroelectronics

Automotive-grade N-channel 600 V, 37 mOhm typ., 66 A, MDmesh DM2 Power MOSFET in a TO-247 long leads package

STWA65N60DM6 STMicroelectronics

N-channel 600 V, 60 mOhm typ., 38 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

STWA40N90K5 STMicroelectronics

N-channel 900 V, 0.088 Ohm typ., 38 A MDmesh K5 Power MOSFET in a TO-247 long leads package

STWA48N60DM2 STMicroelectronics

N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

STWA67N60M6 STMicroelectronics

N-channel 600 V, 45 mOhm typ., 52 A MDmesh M6 Power MOSFET in a TO-247 long leads package

STWA12N120K5 STMicroelectronics

N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 long leads package

STWA40N95DK5 STMicroelectronics

N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 long leads package

STWA65N65DM2AG STMicroelectronics

Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

STWA70N65DM6 STMicroelectronics

N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

SCTWA90N65G2V STMicroelectronics

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ.

STWA48N60M2 STMicroelectronics

N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 long leads package

STWA75N60M6 STMicroelectronics

N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 long leads package