STMicroelectronics SCTWA35N65G2V MOSFETs

Name: SCTWA35N65G2V
Brand: STMicroelectronics
SKU: SCTWA35N65G2V
Price: 28.5441 USD
Availability: InStock

Silicon carbide Power MOSFET 650 V, 45 A, 75 mOhm (typ.

6STMicroelectronicsTO-247 Long Leads$28.54

Same model may have multiple batches, images only for reference.

SCTWA35N65G2V

Manufacturer

STMicroelectronics

Part Number (MPN)

SCTWA35N65G2V

Technical Specifications

STMicroelectronics SCTWA35N65G2V MOSFETs technical specifications.

General

RoHS

Yes

Package / Case

TO-247-3

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 175°C (TJ)

Lifecycle Status

Obsolete

Vgs Th Max ID

3.2V @ 1mA

Gate Charge Qg Max Vgs

73 nC @ 20 V

Vgs Max

+20V, -5V

Input Capacitance Ciss Max Vds

73000 pF @ 400 V

Fet Type

N-Channel

Alternate Parts Comparison (SCTWA35N65G2V vs SCTWA90N65G2V vs STWA65N60DM6 vs STWA65N65DM2AG)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	STMicroelectronicsSCTWA35N65G2V	STMicroelectronicsSCTWA90N65G2V	STMicroelectronicsSTWA65N60DM6	STMicroelectronicsSTWA65N65DM2AG
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Lifecycle Status	Obsolete	Active	Active	Active
Current Continuous Drain ID 25 C	45A (Tc)	119A (Tc)	38A (Tc)	60A (Tc)
Drain to Source Voltage Vdss	650 V	650 V	600 V	650 V
Fet Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	SiCFET (Silicon Carbide)	SiCFET (Silicon Carbide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs Max	+20V, -5V	+22V, -10V	±25V	±25V
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 200°C (TJ)	--	-55°C ~ 150°C (TJ)
Drive Voltage Max Rds on Min Rds on	18V, 20V	18V	--	10V
Gate Charge Qg Max Vgs	73 nC @ 20 V	157 nC @ 18 V	--	120 nC @ 10 V
Input Capacitance Ciss Max Vds	73000 pF @ 400 V	3380 pF @ 400 V	--	5500 pF @ 100 V
Action	RFQ	RFQ	RFQ	RFQ

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