STMicroelectronics STW68N65DM6-4AG MOSFETs
MOSFET N-CH 650V 72A TO247-4
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STW68N65DM6-4AG
Base Model
Detailed Description
MOSFET N-CH 650V 72A TO247-4
Package
TO-247-4
Lifecycle Status
Active
Datasheet
STW68N65DM6-4AG Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STW68N65DM6-4AG MOSFETs technical specifications.
General
Series
MDmesh™
Package / Case
TO-247-4
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
118 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
5900 pF @ 100 V
Power Dissipation Max
480W (Tc)
Fet Type
N-Channel
Alternate Parts Comparison (STW68N65DM6-4AG vs STW68N60M6 vs STW81101AT vs STW81100ATR-1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-4 | TO-247-3 | 28-VFQFN Exposed Pad | 28-VFQFN Exposed Pad |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 85°C | -40°C ~ 85°C |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Series | MDmesh™ | MDmesh™ M6 | -- | -- |
| Current Continuous Drain ID 25 C | 72A (Tc) | 63A (Tc) | -- | -- |
| Drain to Source Voltage Vdss | 650 V | 600 V | -- | -- |
| Fet Type | N-Channel | N-Channel | -- | -- |
| Gate Charge Qg Max Vgs | 118 nC @ 10 V | 106 nC @ 10 V | -- | -- |
| Input Capacitance Ciss Max Vds | 5900 pF @ 100 V | 4360 pF @ 100 V | -- | -- |
| Power Dissipation Max | 480W (Tc) | 390W (Tc) | -- | -- |
| Rds on Max ID Vgs | 39mOhm @ 36A, 10V | 41mOhm @ 31.5A, 10V | -- | -- |
| Action |
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