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STMicroelectronics STW68N65DM6-4AG MOSFETs

MOSFET N-CH 650V 72A TO247-4

2 ActiveSTMicroelectronicsSTW68NTO-247-4$25.38
STW68N65DM6-4AG TO-247-4 package illustration

Same model may have multiple batches, images only for reference.

STW68N65DM6-4AG
Manufacturer
Part Number (MPN)
STW68N65DM6-4AG
Base Model
Detailed Description
MOSFET N-CH 650V 72A TO247-4
Package
TO-247-4
Lifecycle Status
Active
Datasheet
PDF STW68N65DM6-4AG Datasheet
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Ordering Code Family

STW68N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STW68N65DM6-4AG MOSFETs technical specifications.

General

Series
MDmesh™
Package / Case
TO-247-4
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
118 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
5900 pF @ 100 V
Power Dissipation Max
480W (Tc)
Fet Type
N-Channel

Alternate Parts Comparison (STW68N65DM6-4AG vs STW68N60M6 vs STW81101AT vs STW81100ATR-1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-247-4TO-247-328-VFQFN Exposed Pad28-VFQFN Exposed Pad
Mounting TypeThrough HoleThrough HoleSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-40°C ~ 85°C-40°C ~ 85°C
Lifecycle StatusActiveActiveActiveObsolete
SeriesMDmesh™MDmesh™ M6----
Current Continuous Drain ID 25 C72A (Tc)63A (Tc)----
Drain to Source Voltage Vdss650 V600 V----
Fet TypeN-ChannelN-Channel----
Gate Charge Qg Max Vgs118 nC @ 10 V106 nC @ 10 V----
Input Capacitance Ciss Max Vds5900 pF @ 100 V4360 pF @ 100 V----
Power Dissipation Max480W (Tc)390W (Tc)----
Rds on Max ID Vgs39mOhm @ 36A, 10V41mOhm @ 31.5A, 10V----
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