STMicroelectronics MJD122-1 BJTs
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD122-1
Detailed Description
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Package
TO-251-3 Short Leads, IPAK, TO-251AA
Lifecycle Status
Active
Datasheet
MJD122-1 Datasheet
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Technical Specifications
STMicroelectronics MJD122-1 BJTs technical specifications.
General
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
10µA
Dc Current Gain Hfe Min IC Vce
1000 @ 4A, 4V
Power Max
20 W
Transistor Type
NPN - Darlington
Current Collector IC Max
8 A
Voltage Collector Emitter Breakdown Max
100 V
Alternate Parts Comparison (MJD122-1 vs MJD340T4 vs MJD3055T4 vs MJD112T4)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 10µA | 100µA (ICBO) | 50µA | 20µA |
| Current Collector IC Max | 8 A | 500 mA | 10 A | 2 A |
| Dc Current Gain Hfe Min IC Vce | 1000 @ 4A, 4V | 30 @ 50mA, 10V | 20 @ 4A, 4V | 1000 @ 2A, 3V |
| Power Max | 20 W | 15 W | 20 W | 20 W |
| Transistor Type | NPN - Darlington | NPN | NPN | NPN - Darlington |
| Voltage Collector Emitter Breakdown Max | 100 V | 300 V | 60 V | 100 V |
| Vce Saturation Max Ib IC | 4V @ 80mA, 8A | -- | 8V @ 3.3A, 10A | 3V @ 40mA, 4A |
| Action |
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