STMicroelectronics BD442G BJTs
4A 80V PNP Si Power BJT, TO-126
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BD442G
Detailed Description
4A 80V PNP Si Power BJT, TO-126
Package
TO-126
Lifecycle Status
Active
Datasheet
BD442G Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics BD442G BJTs technical specifications.
General
Series
BD442
RoHS
Yes
Number of Pins
3
Package / Case
TO-225-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Collector Base Voltage Vcbo
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
800 mV
Alternate Parts Comparison (BD442G vs BD911 vs BD438 vs BD434)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-225-3 | TO-220-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Current Collector Cutoff Max | 100µA (ICBO) | 1mA | 100µA | 100µA |
| Current Collector IC Max | 4 A | 15 A | 4 A | 4 A |
| Dc Current Gain Hfe Min IC Vce | 40 @ 500mA, 1V | 15 @ 5A, 4V | 30 @ 10mA, 5V | 40 @ 10mA, 5V |
| Frequency Transition | 3 MHz | 3MHz | 3MHz | 3MHz |
| Power Max | 36 W | 90 W | 36 W | 36 W |
| Transistor Type | PNP | NPN | PNP | PNP |
| Vce Saturation Max Ib IC | 800mV @ 300mA, 3A | 3V @ 2.5A, 10A | 600mV @ 200mA, 2A | 500mV @ 200mA, 2A |
| Voltage Collector Emitter Breakdown Max | 80 V | 100 V | 45 V | 22 V |
| Action |
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