ROHM SCT4018KRC15 MOSFETs
1200V, 18M, 4-PIN THD, TRENCH-ST
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCT4018KRC15
Detailed Description
1200V, 18M, 4-PIN THD, TRENCH-ST
Package
TO-247-4
Lifecycle Status
Active
Datasheet
SCT4018KRC15 Datasheet
Quick Jump:
Technical Specifications
ROHM SCT4018KRC15 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
+ 175°C
Technology
SiC
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
1.2 kV
ID Continuous Drain Current
81 A
Rds on Drain Source Resistance
18 mOhms
Vgs Gate Source Voltage
- 4 V, + 21 V
Alternate Parts Comparison (SCT4018KRC15 vs SCT3030ALHRC11 vs SCT3060ARC14 vs SCT2750NYTB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Fall Time | 11 ns | 27 ns | 13 ns | 63 ns |
| ID Continuous Drain Current | 81 A | 70 A | 39 A | 6 A |
| Package | TO-247-4 | TO-247-3 | TO-247-4 | TO-268-3,D3PAK(2Leads+Tab),TO-268AA |
| Pd Power Dissipation | 312 W | 262 W | 165 W | 57 W |
| Qg Gate Charge | 170 nC | 104 nC | 58 nC | 17 nC |
| Rds on Drain Source Resistance | 18 mOhms | 30 mOhms | 60 mOhms | 750 mOhms |
| Rise Time | 21 ns | 41 ns | 14 ns | 24 ns |
| Technology | SiC | SiC | SiC | SiC |
| Action |
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