ROHM SCT3060ARC14 MOSFETs
SICFET N-CH 650V 39A TO247-4L
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCT3060ARC14
Detailed Description
SICFET N-CH 650V 39A TO247-4L
Package
TO-247-4
Lifecycle Status
Active
Datasheet
SCT3060ARC14 Datasheet
Quick Jump:
Technical Specifications
ROHM SCT3060ARC14 MOSFETs technical specifications.
General
Series
SCT3x
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
SiC
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
650 V
ID Continuous Drain Current
39 A
Rds on Drain Source Resistance
60 mOhms
Vgs Gate Source Voltage
- 4 V, + 22 V
Alternate Parts Comparison (SCT3060ARC14 vs SCT4018KRC15 vs SCT4062KRHRC15 vs SCT3030KLHRC11)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Fall Time | 13 ns | 11 ns | 10 ns | 29 ns |
| ID Continuous Drain Current | 39 A | 81 A | 26 A | 72 A |
| Package | TO-247-4 | TO-247-4 | TO-247-4 | TO-247-3 |
| Pd Power Dissipation | 165 W | 312 W | 115 W | 339 W |
| Qg Gate Charge | 58 nC | 170 nC | 64 nC | 131 nC |
| Rds on Drain Source Resistance | 60 mOhms | 18 mOhms | 62 mOhms | 30 mOhms |
| Rise Time | 14 ns | 21 ns | 11 ns | 42 ns |
| Technology | SiC | SiC | SiC | SiC |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
NTH4L075N065SC1onsemiSimilaronsemi
Pin YesPkg YesElec Mixed
SILICON CARBIDE (SIC) MOSFET - 5
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