ROHM SCT2750NYTB MOSFETs
SICFET N-CH 1700V 5.9A TO268
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCT2750NYTB
Detailed Description
SICFET N-CH 1700V 5.9A TO268
Package
TO-268-3,D3PAK(2Leads+Tab),TO-268AA
Lifecycle Status
Active
Datasheet
SCT2750NYTB Datasheet
Quick Jump:
Technical Specifications
ROHM SCT2750NYTB MOSFETs technical specifications.
General
Series
SCT2x
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
SiC
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
1.7 kV
ID Continuous Drain Current
6 A
Rds on Drain Source Resistance
750 mOhms
Vgs Gate Source Voltage
- 6 V, + 22 V
Alternate Parts Comparison (SCT2750NYTB vs SCT3030KLHRC11 vs SCT2080KEHRC11 vs SCT3060ALHRC11)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SCT2x | SCT3x | SCT2x | SCT3x |
| Mounting Type | SMD/SMT | Through Hole | Through Hole | Through Hole |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 63 ns | 29 ns | 22 ns | 21 ns |
| Forward Transconductance Min | 600 mS | 10.8 S | 3.7 S | 4.9 S |
| ID Continuous Drain Current | 6 A | 72 A | 40 A | 39 A |
| Package | TO-268-3,D3PAK(2Leads+Tab),TO-268AA | TO-247-3 | TO-247-3 | TO-247-3 |
| Pd Power Dissipation | 57 W | 339 W | 262 W | 165 W |
| Qg Gate Charge | 17 nC | 131 nC | 106 nC | 58 nC |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
