ROHM RQ6E050AJTCR MOSFETs
Nch 30V 5A Middle Power MOSFET
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RQ6E050AJTCR
Detailed Description
Nch 30V 5A Middle Power MOSFET
Package
SOT-23-6
Lifecycle Status
Active
Datasheet
RQ6E050AJTCR Datasheet
Quick Jump:
Technical Specifications
ROHM RQ6E050AJTCR MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
5 A
Rds on Drain Source Resistance
35 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Alternate Parts Comparison (RQ6E050AJTCR vs RQ5L015SPTL vs RQ6E035ATTCR vs RQ6E045BNTCR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 5.7 ns | 10 ns | 20 ns | 6 ns |
| ID Continuous Drain Current | 5 A | 1.5 A | 3.5 A | 4.5 A |
| Package | SOT-23-6 | SC-96 | SOT-23-6 | SOT-23-6 |
| Pd Power Dissipation | 1.25 W | 1 W | 1.25 W | 1.25 W |
| Qg Gate Charge | 4.7 nC | 10 nC | 10 nC | 8.4 nC |
| Rds on Drain Source Resistance | 35 mOhms | 360 mOhms | 70 mOhms | 21 mOhms |
| Rise Time | 5.9 ns | 10 ns | 12 ns | 11 ns |
| Action |
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