ROHM RQ1A070APTR MOSFETs
MOSFET P-CH 12V 7A TSMT8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RQ1A070APTR
Detailed Description
MOSFET P-CH 12V 7A TSMT8
Package
TSMT8
Lifecycle Status
Active
Datasheet
RQ1A070APTR Datasheet
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Technical Specifications
ROHM RQ1A070APTR MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
12 V
ID Continuous Drain Current
7 A
Rds on Drain Source Resistance
14 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Related Parts Comparison (RQ1A070APTR vs RQ1A070ZPHZGTR vs RQ5L015SPTL vs RQ3E120GNTB)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSMT8 | TSMT8 | SC-96 | 8-PowerVDFN |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| ID Continuous Drain Current | 7 A | -- | 1.5 A | 12 A |
| Pd Power Dissipation | 1.5 W | -- | 1 W | 2 W |
| Qg Gate Charge | 80 nC | -- | 10 nC | 10 nC |
| Rds on Drain Source Resistance | 14 mOhms | -- | 360 mOhms | 8.8 mOhms |
| Technology | Si | -- | Si | Si |
| Transistor Polarity | P-Channel | -- | P-Channel | N-Channel |
| Action |
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