ROHM QS8M31TR MOSFETs
MOSFET N/P-CH 60V 3A/2A TSMT8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
QS8M31TR
Detailed Description
MOSFET N/P-CH 60V 3A/2A TSMT8
Package
TSMT8
Lifecycle Status
Active
Datasheet
QS8M31TR Datasheet
Quick Jump:
Technical Specifications
ROHM QS8M31TR MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
3 A, 2 A
Rds on Drain Source Resistance
112 mOhms, 210 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (QS8M31TR vs QS6M3TR vs QS5K2TR vs QS8J5TR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 2 Channel | -- | -- | -- |
| RoHS | Yes | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Dual | -- | -- | -- |
| Fall Time | 7 ns, 10 ns | -- | -- | -- |
| ID Continuous Drain Current | 3 A, 2 A | -- | -- | -- |
| Package | TSMT8 | -- | -- | -- |
| Part Aliases | QS8M31 | -- | -- | -- |
| Pd Power Dissipation | 1.5 W | -- | -- | -- |
| Qg Gate Charge | 4 nC, 7.2 nC | -- | -- | -- |
| Action |
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