ROHM QS8M31TR MOSFETs
MOSFET N/P-CH 60V 3A/2A TSMT8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
QS8M31TR
Detailed Description
MOSFET N/P-CH 60V 3A/2A TSMT8
Package
TSMT8
Lifecycle Status
Active
Datasheet
QS8M31TR Datasheet
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Technical Specifications
ROHM QS8M31TR MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
3 A, 2 A
Rds on Drain Source Resistance
112 mOhms, 210 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (QS8M31TR vs QS6M3TR vs QS5K2TR vs QS8J5TR)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel | 2 Channel |
| RoHS | Yes | ROHS3 Compliant | Compliant | ROHS3 Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | N and P-Channel | 2 N-Channel (Dual) Common Source | 2 P-Channel (Dual) |
| Fall Time | 7 ns, 10 ns | 18 ns, 12 ns | 8 ns | 55 ns |
| Package | TSMT8 | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Pd Power Dissipation | 1.5 W | 1.25 W | 1.25 W | 1.5 W |
| Qg Gate Charge | 4 nC, 7.2 nC | 1.6 nC | 2.8 nC | 19 nC |
| Rds on Drain Source Resistance | 112 mOhms, 210 mOhms | 260 mOhms | 100 mOhms | 39 mOhms |
| Rise Time | 15 ns, 12 ns | 18 ns, 12 ns | 10 ns | 40 ns |
| Action |
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