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ROHM QH8MA2TCR MOSFETs

MOSFET N/P-CH 30V 4.5A/3A TSMT8

14,692 ActiveROHM8-SMD,FlatLead$0.11RoHS
QH8MA2TCR 8-SMD,FlatLead package illustration

Same model may have multiple batches, images only for reference.

QH8MA2TCR
Manufacturer
Part Number (MPN)
QH8MA2TCR
Detailed Description
MOSFET N/P-CH 30V 4.5A/3A TSMT8
Package
8-SMD,FlatLead
Lifecycle Status
Active
RoHS State
RoHS Compliant
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Technical Specifications

ROHM QH8MA2TCR MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
4.5 A, 3 A
Rds on Drain Source Resistance
25 mOhms, 55 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
1 V

Alternate Parts Comparison (QH8MA2TCR vs QH8MA3TCR vs QH8KA4TCR vs QH8KA1TCR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD/SMTSurface MountSurface MountSMD/SMT
Number of Channels2 Channel2 Channel2 Channel2 Channel
RoHSYesROHS3 CompliantROHS3 CompliantYes
Channel ModeEnhancementEnhancementEnhancementEnhancement
ConfigurationDualN and P-Channel2 N-Channel (Dual)Dual
Fall Time5.7 ns, 8.5 ns5.7 ns, 20 ns20 ns3.5 ns, 3.5 ns
Forward Transconductance Min1.4 S, 1.9 S2.7 S, 3.3 S7 S1.7 S, 1.7 S
Package8-SMD,FlatLeadTape & Reel (TR)Tape & Reel (TR)TSMT-8
Pd Power Dissipation1.5 W2.5 W1.5 W2.4 W
Qg Gate Charge8.4 nC, 7.8 nC7.2 nC, 10 nC12 nC3 nC
Rds on Drain Source Resistance25 mOhms, 55 mOhms29 mOhms, 48 mOhms17 mOhms56 mOhms, 56 mOhms
Rise Time8 ns, 16.8 ns8 ns, 12 ns20 ns7.5 ns, 7.5 ns
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