ROHM QH8KA1TCR MOSFETs
MOSFET 2N-CH 30V 4.5A TSMT8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
QH8KA1TCR
Detailed Description
MOSFET 2N-CH 30V 4.5A TSMT8
Package
TSMT-8
Lifecycle Status
Active
Datasheet
QH8KA1TCR Datasheet
Quick Jump:
Technical Specifications
ROHM QH8KA1TCR MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
4.5 A
Rds on Drain Source Resistance
56 mOhms, 56 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (QH8KA1TCR vs QH8MA2TCR vs QH8MA3TCR vs QH8KA4TCR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel | 2 Channel |
| RoHS | Yes | Yes | ROHS3 Compliant | ROHS3 Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Dual | N and P-Channel | 2 N-Channel (Dual) |
| Fall Time | 3.5 ns, 3.5 ns | 5.7 ns, 8.5 ns | 5.7 ns, 20 ns | 20 ns |
| Forward Transconductance Min | 1.7 S, 1.7 S | 1.4 S, 1.9 S | 2.7 S, 3.3 S | 7 S |
| Package | TSMT-8 | 8-SMD,FlatLead | Tape & Reel (TR) | Tape & Reel (TR) |
| Pd Power Dissipation | 2.4 W | 1.5 W | 2.5 W | 1.5 W |
| Qg Gate Charge | 3 nC | 8.4 nC, 7.8 nC | 7.2 nC, 10 nC | 12 nC |
| Rds on Drain Source Resistance | 56 mOhms, 56 mOhms | 25 mOhms, 55 mOhms | 29 mOhms, 48 mOhms | 17 mOhms |
| Rise Time | 7.5 ns, 7.5 ns | 8 ns, 16.8 ns | 8 ns, 12 ns | 20 ns |
| Action |
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