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onsemi TIP32G BJTs

PNP BJT Power Transistor, 40V, 3A, TO-220

73,800 ActiveonsemiTO-220$0.69
TIP32G TO-220 package illustration

Same model may have multiple batches, images only for reference.

TIP32G
Manufacturer
Part Number (MPN)
TIP32G
Detailed Description
PNP BJT Power Transistor, 40V, 3A, TO-220
Package
TO-220
Lifecycle Status
Active
Datasheet
PDF TIP32G Datasheet
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Technical Specifications

onsemi TIP32G BJTs technical specifications.

General

Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
10 @ 3A, 4V
Power Max
2 W
Frequency Transition
3MHz
Transistor Type
PNP
Current Collector IC Max
3 A
Voltage Collector Emitter Breakdown Max
40 V

Alternate Parts Comparison (TIP32G vs TIP115G vs TIP121G vs TIP29BG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max300µA2mA500µA300µA
Current Collector IC Max3 A2 A5 A1 A
Dc Current Gain Hfe Min IC Vce10 @ 3A, 4V1000 @ 1A, 4V1000 @ 3A, 3V15 @ 1A, 4V
Power Max2 W2 W2 W2 W
Transistor TypePNPPNP - DarlingtonNPN - DarlingtonNPN
Vce Saturation Max Ib IC1.2V @ 375mA, 3A2.5V @ 8mA, 2A4V @ 20mA, 5A700mV @ 125mA, 1A
Voltage Collector Emitter Breakdown Max40 V60 V80 V80 V
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