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onsemi MJE18008G BJTs

450V 8A NPN BJT Power Transistor TO-220

104,000 ActiveonsemiTO-220$2.18
MJE18008G - No Image Available

Same model may have multiple batches, images only for reference.

MJE18008G
Manufacturer
Part Number (MPN)
MJE18008G
Detailed Description
450V 8A NPN BJT Power Transistor TO-220
Package
TO-220
Lifecycle Status
Active
Datasheet
PDF MJE18008G Datasheet
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Technical Specifications

onsemi MJE18008G BJTs technical specifications.

General

Series
SWITCHMODE™
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100µA
Dc Current Gain Hfe Min IC Vce
14 @ 1A, 5V
Power Max
125 W
Frequency Transition
13MHz
Transistor Type
NPN

Alternate Parts Comparison (MJE18008G vs MJE2955TG vs TIP115G vs TIP121G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max100µA700µA2mA500µA
Current Collector IC Max8 A10 A2 A5 A
Dc Current Gain Hfe Min IC Vce14 @ 1A, 5V20 @ 4A, 4V1000 @ 1A, 4V1000 @ 3A, 3V
DescriptionTRANS NPN 450V 8A TO-220TRANS PNP 60V 10A TO-220TRANS PNP DARL 60V 2A TO-220TRANS NPN DARL 80V 5A TO-220
Detailed DescriptionBipolar (BJT) Transistor NPN 450 V 8 A 13MHz 125 W Through Hole TO-220Bipolar (BJT) Transistor PNP 60 V 10 A 2MHz 75 W Through Hole TO-220Bipolar (BJT) Transistor PNP - Darlington 60 V 2 A 2 W Through Hole TO-220Bipolar (BJT) Transistor NPN - Darlington 80 V 5 A 2 W Through Hole TO-220
Power Max125 W75 W2 W2 W
Transistor TypeNPNPNPPNP - DarlingtonNPN - Darlington
Vce Saturation Max Ib IC700mV @ 900mA, 4.5A8V @ 3.3A, 10A2.5V @ 8mA, 2A4V @ 20mA, 5A
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