onsemi 2N6491G BJTs
NPN BJT 80V 15A TO-220 Power Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N6491G
Detailed Description
NPN BJT 80V 15A TO-220 Power Transistor
Package
TO-220
Lifecycle Status
Active
Datasheet
2N6491G Datasheet
Quick Jump:
Technical Specifications
onsemi 2N6491G BJTs technical specifications.
General
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
20 @ 5A, 4V
Power Max
1.8 W
Frequency Transition
5MHz
Transistor Type
PNP
Current Collector IC Max
15 A
Voltage Collector Emitter Breakdown Max
80 V
Alternate Parts Comparison (2N6491G vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 | 6-TSSOP | 6-TSSOP | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Production | Production | Production |
| Current Collector IC Max | 15 A | 200mA | 100mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 20 @ 5A, 4V | 100 @ 10mA, 1V | 420 @ 2mA, 5V | 420 @ 2mA, 5V |
| Power Max | 1.8 W | 150mW | 380mW | 300 mW |
| Transistor Type | PNP | 2 PNP (Dual) | 2 NPN (Dual) | NPN |
| Vce Saturation Max Ib IC | 3.5V @ 5A, 15A | 400mV @ 5mA, 50mA | 600mV @ 5mA, 100mA | 600mV @ 5mA, 100mA |
| Voltage Collector Emitter Breakdown Max | 80 V | 40V | 45V | 45 V |
| Current Collector Cutoff Max | 1mA | -- | 15nA (ICBO) | 15nA (ICBO) |
| Number of Pins | -- | 6 | 6 | 3 |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
