onsemi KSC5603DTU BJTs
Bipolar Transistors - BJT NPN Sil Planar Sil
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
KSC5603DTU
Detailed Description
Bipolar Transistors - BJT NPN Sil Planar Sil
Package
TO-220
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
KSC5603DTU Datasheet
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Technical Specifications
onsemi KSC5603DTU BJTs technical specifications.
General
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
20 @ 400mA, 3V
Power Max
100 W
Frequency Transition
5MHz
Transistor Type
NPN
Current Collector IC Max
3 A
Voltage Collector Emitter Breakdown Max
800 V
Alternate Parts Comparison (KSC5603DTU vs KSC2383YTA vs KSC1008CYTA vs KSC2334YTU)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | -- | -- |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | -- | -- |
| Number of Pins | -- | 3 | -- | -- |
| RoHS | -- | Compliant | -- | -- |
| Lifecycle Status | Active | Active | -- | -- |
| China ROHS | -- | Compliant | -- | -- |
| Collector Base Voltage Vcbo | -- | 160 V | -- | -- |
| Collector Emitter Breakdown Voltage | -- | 160 V | -- | -- |
| Collector Emitter Saturation Voltage | -- | 1.5 V | -- | -- |
| Collector Emitter Voltage Vceo | -- | 160 V | -- | -- |
| Current Rating | -- | 1 A | -- | -- |
| Element Configuration | -- | Single | -- | -- |
| Action |
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