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onsemi TIP111G BJTs

NPN Darlington BJT Transistor, 80V, 2A, TO-220

67,500 ActiveonsemiTO-220$0.75
TIP111G TO-220 package illustration

Same model may have multiple batches, images only for reference.

TIP111G
Manufacturer
Part Number (MPN)
TIP111G
Detailed Description
NPN Darlington BJT Transistor, 80V, 2A, TO-220
Package
TO-220
Lifecycle Status
Active
Datasheet
PDF TIP111G Datasheet
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Technical Specifications

onsemi TIP111G BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
2mA
Dc Current Gain Hfe Min IC Vce
1000 @ 1A, 4V
Power Max
2 W
Transistor Type
NPN - Darlington
Current Collector IC Max
2 A

Alternate Parts Comparison (TIP111G vs TIP29BG vs TIP29CG vs TIP29AG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max2mA300µA300µA300µA
Current Collector IC Max2 A1 A1 A1 A
Dc Current Gain Hfe Min IC Vce1000 @ 1A, 4V15 @ 1A, 4V15 @ 1A, 4V15 @ 1A, 4V
Power Max2 W2 W2 W2 W
Transistor TypeNPN - DarlingtonNPNNPNNPN
Vce Saturation Max Ib IC2.5V @ 8mA, 2A700mV @ 125mA, 1A700mV @ 125mA, 1A700mV @ 125mA, 1A
Voltage Collector Emitter Breakdown Max80 V80 V100 V60 V
RoHSYes--YesYes
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