onsemi SMMBT5551LT1G BJTs
High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SMMBT5551LT1G
Base Model
Detailed Description
High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
SMMBT5551LT1G Datasheet
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Technical Specifications
onsemi SMMBT5551LT1G BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA
Dc Current Gain Hfe Min IC Vce
80 @ 10mA, 5V
Power Max
225 mW
Transistor Type
NPN
Current Collector IC Max
600 mA
Voltage Collector Emitter Breakdown Max
160 V
Alternate Parts Comparison (SMMBT5551LT1G vs SMMBT5551LT3G vs SMMBT4403LT1G vs SMMBT2222ALT3G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | -- | -55 °C ~ 150 °C | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | -- | 3 | -- |
| RoHS | -- | -- | Compliant | -- |
| Lifecycle Status | Active | -- | Active | Active |
| China ROHS | -- | -- | Compliant | -- |
| Collector Base Voltage Vcbo | -- | -- | 40 V | -- |
| Collector Emitter Breakdown Voltage | -- | -- | 40 V | -- |
| Collector Emitter Saturation Voltage | -- | -- | 750 mV | -- |
| Collector Emitter Voltage Vceo | -- | -- | 40 V | -- |
| Element Configuration | -- | -- | Single | -- |
| Emitter Base Voltage Vebo | -- | -- | -5 V | -- |
| Gain Bandwidth | -- | -- | 200 MHz | -- |
| Action |
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