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onsemi SBCP56T1G BJTs

NPN Bipolar Transistor hFE 40 to 250, SOT-223 (TO-261) 4 LEAD, 1000-REEL

340 ActiveonsemiSBCP56TTO-261-4, TO-261AA$0.42
SBCP56T1G - No Image Available

Same model may have multiple batches, images only for reference.

SBCP56T1G
Manufacturer
Part Number (MPN)
SBCP56T1G
Base Model
Detailed Description
NPN Bipolar Transistor hFE 40 to 250, SOT-223 (TO-261) 4 LEAD, 1000-REEL
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
PDF SBCP56T1G Datasheet
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Ordering Code Family

SBCP56T groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi SBCP56T1G BJTs technical specifications.

General

Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Power Max
1.5 W
Frequency Transition
130MHz
Grade
Automotive
Transistor Type
NPN
Qualification
AEC-Q101
Current Collector IC Max
1 A

Alternate Parts Comparison (SBCP56T1G vs SBCP56T3G vs PZT3904T1G vs NSVBCP53-16T3G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-261-4, TO-261AA--TO-261-4, TO-261AATO-261-4, TO-261AA
Mounting TypeSurface Mount--Surface MountSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)---55°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusActive--ActiveActive
Current Collector IC Max1 A--200 mA1.5 A
Dc Current Gain Hfe Min IC Vce40 @ 150mA, 2V--100 @ 10mA, 1V100 @ 150mA, 2V
DescriptionTRANS NPN 80V 1A SOT223--TRANS NPN 40V 0.2A SOT223TRANS PNP 80V 1.5A SOT223
Detailed DescriptionBipolar (BJT) Transistor NPN 80 V 1 A 130MHz 1.5 W Surface Mount SOT-223 (TO-261)--Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 1.5 W Surface Mount SOT-223 (TO-261)Bipolar (BJT) Transistor PNP 80 V 1.5 A 50MHz 1.5 W Surface Mount SOT-223 (TO-261)
Frequency Transition130MHz--300MHz50MHz
Power Max1.5 W--1.5 W1.5 W
Transistor TypeNPN--NPNPNP
Vce Saturation Max Ib IC500mV @ 50mA, 500mA--300mV @ 5mA, 50mA500mV @ 50mA, 500mA
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