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onsemi SBCP56T1G BJTs

NPN Bipolar Transistor hFE 40 to 250, SOT-223 (TO-261) 4 LEAD, 1000-REEL

340 ActiveonsemiSBCP56TTO-261-4, TO-261AA$0.42
SBCP56T1G TO-261-4, TO-261AA package illustration

Same model may have multiple batches, images only for reference.

SBCP56T1G
Manufacturer
Part Number (MPN)
SBCP56T1G
Base Model
Detailed Description
NPN Bipolar Transistor hFE 40 to 250, SOT-223 (TO-261) 4 LEAD, 1000-REEL
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
PDF SBCP56T1G Datasheet
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Ordering Code Family

SBCP56T groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi SBCP56T1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Power Max
1.5 W
Frequency Transition
130MHz
Grade
Automotive
Transistor Type
NPN
Qualification
AEC-Q101

Alternate Parts Comparison (SBCP56T1G vs SBCP56T3G vs PZT3904T1G vs NSVBCP53-16T3G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max1 A1 A200 mA1.5 A
Dc Current Gain Hfe Min IC Vce40 @ 150mA, 2V40 @ 150mA, 2V100 @ 10mA, 1V100 @ 150mA, 2V
Frequency Transition130MHz130MHz300MHz50MHz
PackageSOT-223-4 , TO-261-4DSOT-223-4TO-261-4,TO-261AASOT-223-4 , TO-261-4D
Power Max1.5 W1.5 W1.5 W1.5 W
Transistor TypeNPNNPNNPNPNP
Vce Saturation Max Ib IC500mV @ 50mA, 500mA500mV @ 50mA, 500mA300mV @ 5mA, 50mA500mV @ 50mA, 500mA
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