onsemi NTB5605PT4G MOSFETs
P-Channel MOSFET -60V, 18.5A, 140mΩ, D2PAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTB5605PT4G
Detailed Description
P-Channel MOSFET -60V, 18.5A, 140mΩ, D2PAK
Package
D2PAK
Lifecycle Status
Obsolete
Datasheet
NTB5605PT4G Datasheet
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Technical Specifications
onsemi NTB5605PT4G MOSFETs technical specifications.
General
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
2V @ 250µA
Gate Charge Qg Max Vgs
22 nC @ 5 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
1190 pF @ 25 V
Fet Type
P-Channel
Power Dissipation Max
88W (Tc)
Alternate Parts Comparison (NTB5605PT4G vs NTB190N65S3HF vs NTB6413ANT4G vs NTB25P06T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Current Continuous Drain ID 25 C | 18.5A (Ta) | 20A (Tc) | 42A (Tc) | 27.5A (Ta) |
| Drain to Source Voltage Vdss | 60 V | 650 V | 100 V | 60 V |
| Drive Voltage Max Rds on Min Rds on | 5V | 10V | 10V | 10V |
| Fet Type | P-Channel | N-Channel | N-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 22 nC @ 5 V | 34 nC @ 10 V | 51 nC @ 10 V | 50 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 1190 pF @ 25 V | 1610 pF @ 400 V | 1800 pF @ 25 V | 1680 pF @ 25 V |
| Power Dissipation Max | 88W (Tc) | 162W (Tc) | 136W (Tc) | 120W (Tj) |
| Rds on Max ID Vgs | 140mOhm @ 8.5A, 5V | 190mOhm @ 10A, 10V | 28mOhm @ 42A, 10V | 82mOhm @ 25A, 10V |
| Action |
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