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onsemi NTB35N15T4G MOSFETs

N-Ch MOSFET 150V 37A 50mR D2PAK

44onsemiD2PAK$1.42
NTB35N15T4G - No Image Available

Same model may have multiple batches, images only for reference.

NTB35N15T4G
Manufacturer
Part Number (MPN)
NTB35N15T4G
Detailed Description
N-Ch MOSFET 150V 37A 50mR D2PAK
Package
D2PAK
Lifecycle Status
Obsolete
Datasheet
PDF NTB35N15T4G Datasheet
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Technical Specifications

onsemi NTB35N15T4G MOSFETs technical specifications.

General

Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
100 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
3200 pF @ 25 V
Fet Type
N-Channel
Power Dissipation Max
2W (Ta), 178W (Tj)

Alternate Parts Comparison (NTB35N15T4G vs NTB190N65S3HF vs NTB6413ANT4G vs NTB25P06T4G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Continuous Drain ID 25 C37A (Ta)20A (Tc)42A (Tc)27.5A (Ta)
Drain to Source Voltage Vdss150 V650 V100 V60 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelP-Channel
Gate Charge Qg Max Vgs100 nC @ 10 V34 nC @ 10 V51 nC @ 10 V50 nC @ 10 V
Input Capacitance Ciss Max Vds3200 pF @ 25 V1610 pF @ 400 V1800 pF @ 25 V1680 pF @ 25 V
Power Dissipation Max2W (Ta), 178W (Tj)162W (Tc)136W (Tc)120W (Tj)
Rds on Max ID Vgs50mOhm @ 18.5A, 10V190mOhm @ 10A, 10V28mOhm @ 42A, 10V82mOhm @ 25A, 10V
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