onsemi MTB50P03HDLT4G MOSFETs
P-Channel MOSFET -30V -50A 25mOhm D2PAK Logic Level
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MTB50P03HDLT4G
Detailed Description
P-Channel MOSFET -30V -50A 25mOhm D2PAK Logic Level
Package
D2PAK
Lifecycle Status
Obsolete
Datasheet
MTB50P03HDLT4G Datasheet
Quick Jump:
Technical Specifications
onsemi MTB50P03HDLT4G MOSFETs technical specifications.
General
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
2V @ 250µA
Gate Charge Qg Max Vgs
100 nC @ 5 V
Vgs Max
±15V
Input Capacitance Ciss Max Vds
4900 pF @ 25 V
Fet Type
P-Channel
Power Dissipation Max
2.5W (Ta), 125W (Tc)
Alternate Parts Comparison (MTB50P03HDLT4G vs 2N7002LT1G vs NTA4151PT1H vs NTK3134NT5G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-236-3, SC-59, SOT-23-3 | SC-75, SOT-416 | SOT-723 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Current Continuous Drain ID 25 C | 50A (Tc) | 115mA (Tc) | 760mA (Tj) | 750mA (Ta) |
| Drain to Source Voltage Vdss | 30 V | 60 V | 20 V | 20 V |
| Drive Voltage Max Rds on Min Rds on | 5V | 5V, 10V | 1.8V, 4.5V | 1.5V, 4.5V |
| Fet Type | P-Channel | N-Channel | P-Channel | N-Channel |
| Input Capacitance Ciss Max Vds | 4900 pF @ 25 V | 50 pF @ 25 V | 156 pF @ 5 V | 120 pF @ 16 V |
| Power Dissipation Max | 2.5W (Ta), 125W (Tc) | 225mW (Ta) | 301mW (Tj) | 310mW (Ta) |
| Rds on Max ID Vgs | 25mOhm @ 25A, 5V | 7.5Ohm @ 500mA, 10V | 360mOhm @ 350mA, 4.5V | 350mOhm @ 890mA, 4.5V |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs Max | ±15V | ±20V | ±6V | ±6V |
| Action |
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