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onsemi NTB25P06T4G MOSFETs

P-Channel MOSFET -60V, 27.5A, 82mΩ, D2PAK

949 ActiveonsemiD2PAK$1.12
NTB25P06T4G - No Image Available

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NTB25P06T4G
Manufacturer
Part Number (MPN)
NTB25P06T4G
Detailed Description
P-Channel MOSFET -60V, 27.5A, 82mΩ, D2PAK
Package
D2PAK
Lifecycle Status
Active
Datasheet
PDF NTB25P06T4G Datasheet
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Technical Specifications

onsemi NTB25P06T4G MOSFETs technical specifications.

General

Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
50 nC @ 10 V
Vgs Max
±15V
Input Capacitance Ciss Max Vds
1680 pF @ 25 V
Fet Type
P-Channel
Power Dissipation Max
120W (Tj)

Alternate Parts Comparison (NTB25P06T4G vs NTB190N65S3HF vs NTB6413ANT4G vs NTB45N06LG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveActiveActiveObsolete
Current Continuous Drain ID 25 C27.5A (Ta)20A (Tc)42A (Tc)45A (Ta)
Drain to Source Voltage Vdss60 V650 V100 V60 V
Drive Voltage Max Rds on Min Rds on10V10V10V5V
Fet TypeP-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs50 nC @ 10 V34 nC @ 10 V51 nC @ 10 V32 nC @ 5 V
Input Capacitance Ciss Max Vds1680 pF @ 25 V1610 pF @ 400 V1800 pF @ 25 V1700 pF @ 25 V
Power Dissipation Max120W (Tj)162W (Tc)136W (Tc)2.4W (Ta), 125W (Tj)
Rds on Max ID Vgs82mOhm @ 25A, 10V190mOhm @ 10A, 10V28mOhm @ 42A, 10V28mOhm @ 22.5A, 5V
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