onsemi NSVMMUN2131LT1G BJTs
PNP Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSVMMUN2131LT1G
Detailed Description
PNP Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL
Package
SOT-23
Lifecycle Status
Active
Datasheet
NSVMMUN2131LT1G Datasheet
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Technical Specifications
onsemi NSVMMUN2131LT1G BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
8 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 5mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
246 mW
Transistor Type
PNP - Pre-Biased
Grade
Automotive
Current Collector IC Max
100 mA
Alternate Parts Comparison (NSVMMUN2131LT1G vs MMBT3904LT1G vs BC849CLT1G vs BC846BLT3G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Production | Active |
| Current Collector IC Max | 100 mA | 200 mA | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 8 @ 5mA, 10V | 100 @ 10mA, 1V | 420 @ 2mA, 5V | 200 @ 2mA, 5V |
| Power Max | 246 mW | 300 mW | 300 mW | 300 mW |
| Transistor Type | PNP - Pre-Biased | NPN | NPN | NPN |
| Vce Saturation Max Ib IC | 250mV @ 5mA, 10mA | 300mV @ 5mA, 50mA | 600mV @ 5mA, 100mA | 600mV @ 5mA, 100mA |
| Voltage Collector Emitter Breakdown Max | 50 V | 40 V | 30 V | 65 V |
| Current Collector Cutoff Max | 500nA | -- | 15nA (ICBO) | 15nA (ICBO) |
| Operating Temperature | -- | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Action |
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