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onsemi NSVMMBT589LT1G BJTs

30 V, 1.0 A High Current PNP Low VCE(sat) Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL

162,000 ActiveonsemiSOT-23$0.37
NSVMMBT589LT1G SOT-23 package illustration

Same model may have multiple batches, images only for reference.

NSVMMBT589LT1G
Manufacturer
Part Number (MPN)
NSVMMBT589LT1G
Detailed Description
30 V, 1.0 A High Current PNP Low VCE(sat) Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Package
SOT-23
Lifecycle Status
Active
Datasheet
PDF NSVMMBT589LT1G Datasheet
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Technical Specifications

onsemi NSVMMBT589LT1G BJTs technical specifications.

General

Series
MMBT589L
RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 500mA, 2V
Power Max
310 mW
Frequency Transition
100MHz
Transistor Type
PNP

Alternate Parts Comparison (NSVMMBT589LT1G vs BC817-25LT3G vs MMBT3904LT1G vs MMUN2213LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Lifecycle StatusActiveActiveActiveActive
Package / CaseTO-236-3, SC-59, SOT-23-3--TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount--Surface MountSurface Mount
RoHSYesYes--Yes
Current Collector IC Max1 A--200 mA100 mA
Dc Current Gain Hfe Min IC Vce100 @ 500mA, 2V--100 @ 10mA, 1V80 @ 5mA, 10V
PackageSOT-23-3SOT23-3--SOT23-3
Power Max310 mW--300 mW246 mW
Transistor TypePNP--NPNNPN - Pre-Biased
Vce Saturation Max Ib IC650mV @ 200mA, 2A--300mV @ 5mA, 50mA250mV @ 300µA, 10mA
Voltage Collector Emitter Breakdown Max30 V--40 V50 V
Action

Cross Reference

Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .

This part is listed as a cross for

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