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onsemi NSVBCW68GLT1G BJTs

PNP Bipolar Transistor SS SOT23 GP XSTR PNP 45V, 3000-REEL

540,000 ActiveonsemiSOT-23$0.12
NSVBCW68GLT1G SOT-23 package illustration

Same model may have multiple batches, images only for reference.

NSVBCW68GLT1G
Manufacturer
Part Number (MPN)
NSVBCW68GLT1G
Detailed Description
PNP Bipolar Transistor SS SOT23 GP XSTR PNP 45V, 3000-REEL
Package
SOT-23
Lifecycle Status
Active
Datasheet
PDF NSVBCW68GLT1G Datasheet
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Technical Specifications

onsemi NSVBCW68GLT1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
120 @ 10mA, 1V
Power Max
225 mW
Frequency Transition
100MHz
Transistor Type
PNP
Current Collector IC Max
800 mA

Alternate Parts Comparison (NSVBCW68GLT1G vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-36-TSSOP6-TSSOPTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
RoHSYesCompliantCompliantCompliant
Lifecycle StatusActiveProductionProductionProduction
Case Outline318-08419B-02419B-02318-08
CompliancePbAHPPbAHPPbAHPPbAHP
Container Qty3000300030003000
Container TypeREELREELREELREEL
Current Collector IC Max800 mA200mA100mA100 mA
Dc Current Gain Hfe Min IC Vce120 @ 10mA, 1V100 @ 10mA, 1V420 @ 2mA, 5V420 @ 2mA, 5V
Ft Min Mhz100250100100
Action

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