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onsemi NST489AMT1G BJTs

NPN BJT Transistor, 30V, 2A, 300MHz, Low VCE(sat), TSOP

2,834 ActiveonsemiSOT-23-6 Thin, TSOT-23-6$0.69
NST489AMT1G SOT-23-6 Thin, TSOT-23-6 package illustration

Same model may have multiple batches, images only for reference.

NST489AMT1G
Manufacturer
Part Number (MPN)
NST489AMT1G
Detailed Description
NPN BJT Transistor, 30V, 2A, 300MHz, Low VCE(sat), TSOP
Package
SOT-23-6 Thin, TSOT-23-6
Lifecycle Status
Active
Datasheet
PDF NST489AMT1G Datasheet
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Technical Specifications

onsemi NST489AMT1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
SOT-23-6 Thin, TSOT-23-6
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
300 @ 500mA, 5V
Power Max
535 mW
Frequency Transition
300MHz
Transistor Type
NPN
Current Collector IC Max
2 A

Alternate Parts Comparison (NST489AMT1G vs NST3906DP6T5G vs NST30010MXV6T1G vs NST847BDP6T5G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSOT-23-6 Thin, TSOT-23-6SOT-963SOT-563-6SOT-963
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max2 A200mA100 mA100mA
Dc Current Gain Hfe Min IC Vce300 @ 500mA, 5V100 @ 10mA, 1V420 @ 2mA, 5V200 @ 2mA, 5V
Frequency Transition300MHz250MHz100 MHz100MHz
Power Max535 mW350mW500 mW350mW
Transistor TypeNPN2 PNP (Dual)2 PNP (Dual) Matched Pair2 NPN (Dual)
Vce Saturation Max Ib IC200mV @ 100mA, 1A400mV @ 5mA, 50mA600mV @ 5mA, 100mA600mV @ 5mA, 100mA
Voltage Collector Emitter Breakdown Max30 V40V30 V45V
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