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onsemi NSS30201MR6T1G BJTs

30V 2A NPN BJT TSOP Low VCE(sat) Transistor

162,000 ActiveonsemiSOT-23-6 Thin, TSOT-23-6$0.41
NSS30201MR6T1G - No Image Available

Same model may have multiple batches, images only for reference.

NSS30201MR6T1G
Manufacturer
Part Number (MPN)
NSS30201MR6T1G
Detailed Description
30V 2A NPN BJT TSOP Low VCE(sat) Transistor
Package
SOT-23-6 Thin, TSOT-23-6
Lifecycle Status
Active
Datasheet
PDF NSS30201MR6T1G Datasheet
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Technical Specifications

onsemi NSS30201MR6T1G BJTs technical specifications.

General

RoHS
True
Package / Case
SOT-23-6 Thin, TSOT-23-6
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
300 @ 500mA, 5V
Power Max
535 mW
Frequency Transition
300MHz
Transistor Type
NPN
Current Collector IC Max
2 A

Alternate Parts Comparison (NSS30201MR6T1G vs NSS20200LT1G vs NSS12200LT1G vs NSS30100LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max100nA100nA (ICBO)100nA (ICBO)100nA
Current Collector IC Max2 A2 A2 A1 A
Dc Current Gain Hfe Min IC Vce300 @ 500mA, 5V250 @ 500mA, 2V250 @ 500mA, 2V100 @ 500mA, 2V
Description--------
Detailed Description--------
Frequency Transition300MHz100MHz100MHz100MHz
Power Max535 mW460 mW460 mW310 mW
Transistor TypeNPNPNPPNPPNP
Action

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