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onsemi MUN5335DW1T1G BJTs

Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R

2,480 ActiveonsemiMUN5335DW6-TSSOP, SC-88, SOT-363$0.13
MUN5335DW1T1G - No Image Available

Same model may have multiple batches, images only for reference.

MUN5335DW1T1G
Manufacturer
Part Number (MPN)
MUN5335DW1T1G
Base Model
Detailed Description
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
PDF MUN5335DW1T1G Datasheet
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Ordering Code Family

MUN5335DW groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi MUN5335DW1T1G BJTs technical specifications.

General

Package / Case
6-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
250mW
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current Collector IC Max
100mA
Voltage Collector Emitter Breakdown Max
50V

Alternate Parts Comparison (MUN5335DW1T1G vs MUN5335DW1T2G vs MUN5211T1G vs MUN5314DW1T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature-----55 °C ~ 150 °C--
Number of Pins----3--
RoHS----Compliant--
Lifecycle StatusActiveActiveActiveActive
China ROHS----Compliant--
Collector Emitter Breakdown Voltage----50 V--
Collector Emitter Voltage Vceo----50 V--
Contact Plating----Tin--
Continuous Collector Current----100 mA--
Current Rating----100 mA--
Element Configuration----Single--
Halogen Free----Halogen Free--
Action

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