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onsemi MUN5211T1G BJTs

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm

1,959,795 ActiveonsemiSOT-323-3$0.02RoHS
MUN5211T1G onsemi

Same model may have multiple batches, images only for reference.

MUN5211T1G
Manufacturer
Part Number (MPN)
MUN5211T1G
Detailed Description
Reliable BJTs by onsemi, engineered for high-performance systems.
Package
SOT-323-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF MUN5211T1G Datasheet
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Technical Specifications

onsemi MUN5211T1G BJTs technical specifications.

General

RoHS
Compliant
Number of Pins
3
Packaging
Tape and Reel
Operating Temperature
-55 °C ~ 150 °C
Lifecycle Status
Production
Manufacturer Lifecycle Status
ACTIVE
Package
SOT-323-3
Contact Plating
Tin
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage Vceo
50 V

Alternate Parts Comparison (MUN5211T1G vs MUN5314DW1T1G vs MUN5136T1G vs MUN5213T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature-55 °C ~ 150 °C------
Number of Pins3------
RoHSCompliant------
Lifecycle StatusProduction------
China ROHSCompliant------
Collector Emitter Breakdown Voltage50 V------
Collector Emitter Voltage Vceo50 V------
Contact PlatingTin------
Continuous Collector Current100 mA------
Current Rating100 mA------
Element ConfigurationSingle------
Halogen FreeHalogen Free------
Action

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