onsemi MUN5112DW1T1G BJTs
Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MUN5112DW1T1G
Detailed Description
Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
MUN5112DW1T1G Datasheet
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Technical Specifications
onsemi MUN5112DW1T1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
60 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
250mW
Transistor Type
2 PNP - Pre-Biased (Dual)
Current Collector IC Max
100mA
Alternate Parts Comparison (MUN5112DW1T1G vs MUN5211T1G vs MUN5314DW1T1G vs MUN5136T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 6-TSSOP | SC-70, SOT-323 | 6-TSSOP | SC-70, SOT-323 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Production | Active | Active |
| Current Collector Cutoff Max | 500nA | 500nA | 500nA | 500nA |
| Current Collector IC Max | 100mA | 100 mA | 100mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 60 @ 5mA, 10V | 35 @ 5mA, 10V | 80 @ 5mA, 10V | 80 @ 5mA, 10V |
| Power Max | 250mW | 202 mW | 250mW | 202 mW |
| Resistor Base R1 | 22kOhms | 10 kOhms | 10kOhms | 100 kOhms |
| Resistor Emitter Base R2 | 22kOhms | 10 kOhms | 47kOhms | 100 kOhms |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | NPN - Pre-Biased | 1 NPN, 1 PNP - Pre-Biased (Dual) | PNP - Pre-Biased |
| Vce Saturation Max Ib IC | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 50V | 50 V | 50V | 50 V |
| Action |
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