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onsemi 2N3904TF BJTs

Bipolar Transistors - BJT NPN 40V 200mA

720,000 Activeonsemi2N3904TO-226-3, TO-92-3 (TO-226AA) Formed Leads$0.07
2N3904TF - No Image Available

Same model may have multiple batches, images only for reference.

2N3904TF
Manufacturer
Part Number (MPN)
2N3904TF
Base Model
Detailed Description
Bipolar Transistors - BJT NPN 40V 200mA
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lifecycle Status
Active
Datasheet
PDF 2N3904TF Datasheet
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Ordering Code Family

2N3904 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

onsemi 2N3904TF BJTs technical specifications.

General

Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 10mA, 1V
Power Max
625 mW
Frequency Transition
300MHz
Transistor Type
NPN
Current Collector IC Max
200 mA
Voltage Collector Emitter Breakdown Max
40 V

Alternate Parts Comparison (2N3904TF vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Number of Pins--663
RoHS--CompliantCompliantCompliant
Lifecycle StatusActiveActiveActiveActive
China ROHS--CompliantCompliantCompliant
Collector Base Voltage Vcbo--40 V50 V50 V
Collector Emitter Breakdown Voltage--40 V45 V45 V
Collector Emitter Saturation Voltage---400 mV600 mV600 mV
Collector Emitter Voltage Vceo--40 V45 V45 V
Contact Plating--TinTinTin
Current Rating---200 mA100 mA100 mA
Element Configuration--DualDualSingle
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