onsemi KSP2907ACTA BJTs
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
KSP2907ACTA
Detailed Description
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lifecycle Status
Active
Datasheet
KSP2907ACTA Datasheet
Quick Jump:
Technical Specifications
onsemi KSP2907ACTA BJTs technical specifications.
General
RoHS
True
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 150mA, 10V
Power Max
625 mW
Frequency Transition
200MHz
Transistor Type
PNP
Current Collector IC Max
600 mA
Alternate Parts Comparison (KSP2907ACTA vs J111-D74Z vs 2N3906TF vs 2N3904TAR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 625 mW | 625 mW | 625 mW | 625 mW |
| Current Collector IC Max | 600 mA | -- | 200 mA | 200 mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 150mA, 10V | -- | 100 @ 10mA, 1V | 100 @ 10mA, 1V |
| Frequency Transition | 200MHz | -- | 250MHz | 300MHz |
| Transistor Type | PNP | -- | PNP | NPN |
| Vce Saturation Max Ib IC | 1.6V @ 50mA, 500mA | -- | 400mV @ 5mA, 50mA | 300mV @ 5mA, 50mA |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.