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onsemi MMUN2217LT1G BJTs

NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL

1,728,000 ActiveonsemiSOT-23$0.03
MMUN2217LT1G SOT-23 package illustration

Same model may have multiple batches, images only for reference.

MMUN2217LT1G
Manufacturer
Part Number (MPN)
MMUN2217LT1G
Detailed Description
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL
Package
SOT-23
Lifecycle Status
Active
Datasheet
PDF MMUN2217LT1G Datasheet
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Technical Specifications

onsemi MMUN2217LT1G BJTs technical specifications.

General

Series
MMUN2217L
RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Lifecycle Status
Active
Resistor Emitter Base R2
10 kOhms
Dc Current Gain Hfe Min IC Vce
35 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 1mA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
NPN - Pre-Biased

Alternate Parts Comparison (MMUN2217LT1G vs MMUN2213LT1G vs BC817-25LT3G vs MMBT3904LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Lifecycle StatusActiveActiveActiveActive
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3--TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface Mount--Surface Mount
RoHSYesYesYes--
Current Collector IC Max100 mA100 mA--200 mA
Dc Current Gain Hfe Min IC Vce35 @ 5mA, 10V80 @ 5mA, 10V--100 @ 10mA, 1V
PackageSOT23-3SOT23-3SOT23-3--
Power Max246 mW246 mW--300 mW
Transistor TypeNPN - Pre-BiasedNPN - Pre-Biased--NPN
Vce Saturation Max Ib IC250mV @ 1mA, 10mA250mV @ 300µA, 10mA--300mV @ 5mA, 50mA
Voltage Collector Emitter Breakdown Max50 V50 V--40 V
Action

Cross Reference

Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .

This part is listed as a cross for

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