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onsemi MMUN2212LT1G BJTs

NPN Digital BJT Transistor, 50V, 100mA, 246mW, SOT-23

40,897 ActiveonsemiSOT-23$0.07
MMUN2212LT1G SOT-23 package illustration

Same model may have multiple batches, images only for reference.

MMUN2212LT1G
Manufacturer
Part Number (MPN)
MMUN2212LT1G
Detailed Description
NPN Digital BJT Transistor, 50V, 100mA, 246mW, SOT-23
Package
SOT-23
Lifecycle Status
Active
Datasheet
PDF MMUN2212LT1G Datasheet
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Technical Specifications

onsemi MMUN2212LT1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Lifecycle Status
Active
Resistor Emitter Base R2
22 kOhms
Dc Current Gain Hfe Min IC Vce
60 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
NPN - Pre-Biased
Power Max
246 mW

Related Parts Comparison (MMUN2212LT1G vs MMUN2213LT1G vs MMBT3904LT1G vs BC817-25LT3G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Lifecycle StatusActiveActiveActiveActive
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3--
Mounting TypeSurface MountSurface MountSurface Mount--
RoHSYesYes--Yes
Case Outline318-08318-08--318-08
CompliancePbAHPPbAHP--PbAHP
Container Qty30003000--10000
Container TypeREELREEL--REEL
Current Collector IC Max100 mA100 mA200 mA--
Dc Current Gain Hfe Min IC Vce60 @ 5mA, 10V80 @ 5mA, 10V100 @ 10mA, 1V--
Hfe Min6080--160
MSL Temp C260260--260
Action

Cross Reference

Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .

This part is listed as a cross for

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