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onsemi MMBT6521LT1G BJTs

NPN Bipolar Small Signal Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL

432,000 ActiveonsemiSOT-23$0.12
MMBT6521LT1G SOT-23 package illustration

Same model may have multiple batches, images only for reference.

MMBT6521LT1G
Manufacturer
Part Number (MPN)
MMBT6521LT1G
Detailed Description
NPN Bipolar Small Signal Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Package
SOT-23
Lifecycle Status
Active
Datasheet
PDF MMBT6521LT1G Datasheet
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Technical Specifications

onsemi MMBT6521LT1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
500nA (ICBO)
Dc Current Gain Hfe Min IC Vce
300 @ 2mA, 10V
Power Max
225 mW
Transistor Type
NPN
Current Collector IC Max
100 mA

Alternate Parts Comparison (MMBT6521LT1G vs MMBT3904LT1G vs MMBT5551LT1G vs BC817-25LT3G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Lifecycle StatusActiveActiveActiveActive
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3--
Mounting TypeSurface MountSurface MountSurface Mount--
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--
RoHSYes--YesYes
Case Outline318-08--318-08318-08
CompliancePbAHP--PbAHPPbAHP
Container Qty3000--300010000
Container TypeREEL--REELREEL
Current Collector IC Max100 mA200 mA600 mA--
Dc Current Gain Hfe Min IC Vce300 @ 2mA, 10V100 @ 10mA, 1V80 @ 10mA, 5V--
Hfe Max600--250400
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