onsemi MMBFJ177LT1G BJTs
P-CH JFET 3-Pin SOT-23
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MMBFJ177LT1G
Detailed Description
P-CH JFET 3-Pin SOT-23
Package
SOT-23
Lifecycle Status
Active
Datasheet
MMBFJ177LT1G Datasheet
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Technical Specifications
onsemi MMBFJ177LT1G BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Description
JFET P-CH 30V SOT23-3
Detailed Description
JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)
Input Capacitance Ciss Max Vds
11pF @ 10V (VGS)
Resistance Rds on
300 Ohms
Power Max
225 mW
Fet Type
P-Channel
Alternate Parts Comparison (MMBFJ177LT1G vs MMUN2213LT1G vs BC849CLT1G vs BC846BLT3G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Description | JFET P-CH 30V SOT23-3 | TRANS PREBIAS NPN 50V SOT23-3 | TRANS NPN 30V 0.1A SOT23-3 | TRANS NPN 65V 0.1A SOT23-3 |
| Detailed Description | JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236) | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) | Bipolar (BJT) Transistor NPN 30 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236) | Bipolar (BJT) Transistor NPN 65 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236) |
| Power Max | 225 mW | 246 mW | 300 mW | 300 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) | -- | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Current Collector Cutoff Max | -- | 500nA | 15nA (ICBO) | 15nA (ICBO) |
| Current Collector IC Max | -- | 100 mA | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | -- | 80 @ 5mA, 10V | 420 @ 2mA, 5V | 200 @ 2mA, 5V |
| Transistor Type | -- | NPN - Pre-Biased | NPN | NPN |
| Vce Saturation Max Ib IC | -- | 250mV @ 300µA, 10mA | 600mV @ 5mA, 100mA | 600mV @ 5mA, 100mA |
| Action |
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