onsemi MJE3055TG BJTs
NPN BJT Transistor, 60V, 10A, 75W, TO-220
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJE3055TG
Detailed Description
NPN BJT Transistor, 60V, 10A, 75W, TO-220
Package
TO-220
Lifecycle Status
Active
Datasheet
MJE3055TG Datasheet
Quick Jump:
Technical Specifications
onsemi MJE3055TG BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
20 @ 4A, 4V
Power Max
75 W
Frequency Transition
2MHz
Transistor Type
NPN
Current Collector IC Max
10 A
Alternate Parts Comparison (MJE3055TG vs MJE2955TG vs MJE18008G vs TIP121G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 700µA | 700µA | 100µA | 500µA |
| Current Collector IC Max | 10 A | 10 A | 8 A | 5 A |
| Dc Current Gain Hfe Min IC Vce | 20 @ 4A, 4V | 20 @ 4A, 4V | 14 @ 1A, 5V | 1000 @ 3A, 3V |
| Power Max | 75 W | 75 W | 125 W | 2 W |
| Transistor Type | NPN | PNP | NPN | NPN - Darlington |
| Vce Saturation Max Ib IC | 8V @ 3.3A, 10A | 8V @ 3.3A, 10A | 700mV @ 900mA, 4.5A | 4V @ 20mA, 5A |
| Voltage Collector Emitter Breakdown Max | 60 V | 60 V | 450 V | 80 V |
| Frequency Transition | 2MHz | 2MHz | 13MHz | -- |
| Action |
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